教育背景：

2019年-2021年, 香港城市大学，化学系，博士后

2014年-2019年, 北京科技大学，材料科学与工程学院，博士

2010年-2014年, 湖北大学，材料科学与工程学院，学士

工作经历：

2021年-至今，北京科技大学，前沿交叉科学技术研究院，教授

研究方向：

1. 低维材料的可控合成与晶格结构设计;

2. 基于低维材料的新型半导体电子与光电器件；

3. 基于范德华异质结的高性能微电子器件与电路集成。

主要科研成果：

      主要在二维半导体材料的制备、结构表征、器件组装和性能等研究领域开展工作，取得了多项原创性研究成果。在相关领域发表研究论文27篇，其中以第一作者发表11篇，包括 Nature Communications (2篇), Advanced Materials (5篇), ACS Nano (1篇), Photonics Research (1篇)，Accounts of Materials Research(1篇)等。其中单篇论文最高引用超过160次(Google Scholar)，该论文被评为“北京地区广受关注学术论文”；获得国家授权专利8项；参与撰写《半导体纳米线功能器件》第3章和《Van der Waals Heterostructures - Fabrications, Properties and Applications》第7、9章；获中国科协青年人才托举工程、北京市科技新星等计划支持，担任Chinese Chemical Letters期刊编委。

荣誉及社会兼职：

期刊编委：Chinese Chemical Letters，Elsevier，2022-至今

论文著作：

1. X. Zhang^#, Q. Liao^#, S. Liu^#, Z. Kang, Z. Zhang^*, J. Du, F. Li, S. Zhang, J. Xiao, B. Liu, Y. Ou, X. Liu, L. Gu, and Y. Zhang^*, Poly(4-styrenesulfonate)-induced sulfur vacancy self-healing strategy for monolayer MoS₂ homojunction photodiode. Nature Communications, 2017, 8, 15881.

2. X. Zhang^#, B. Liu^#, L. Gao, H. Yu, X. Liu, J. Du, J. Xiao, Y. Liu, L. Gu, Q. Liao, Z. Kang, Z. Zhang^*, and Y. Zhang^*. Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions. Nature Communications. 2021, 12, 1522.

3. X. Zhang^#, Q. Liao^#, Z. Kang^#, B. Liu, X. Liu, Y. Ou, J. Xiao, J. Du, Y. Liu, L. Gao, L. Gu, M. Hong, H. Yu, Z. Zhang^*, X. Duan^*, and Y. Zhang^*. Hidden vacancy benefit in monolayer 2D semiconductors. Advanced Materials. 2021, 33(7), 2007051.

4. X. Zhang^#, Z. Kang^#, L. Gao^#, B. Liu, H. Yu, Q. Liao, Z. Zhang^*, Y. Zhang. Molecule-upgraded van der Waals contacts for Schottky-barrier-free electronics. Advanced Materials. 2021, 33(45), 2104935.

5. X. Zhang^#, Huihui Yu^#, Wenhui Tang^#, Xiaofu Wei, Li Gao, Mengyu Hong, Qingliang Liao, Zhuo Kang, Zheng Zhang^*, and Yue Zhang^*. All-van-der-Waals barrier-free contacts for high-mobility transistors. Advanced Materials. 2023, 202109521.

6. X. Zhang^#, Yanzhe Zhang^#, Huihui Yu, Hang Zhao, Zhihong Cao, Zheng Zhang*, Yue Zhang*. Van der Waals Interface‐dominated all‐2D Electronics. Advanced Materials. 2023, 2207966

7. X. Zhang^#, Q. Liao^#, Z. Kang, B. Liu, Y. Ou, J. Du, J. Xiao, L. Gao, H. Shan, Y. Luo, Z. Fang, P. Wang, Z. Sun, Z. Zhang^*, and Y. Zhang^*. Self-healing originated van der Waals homojunctions with strong interlayer coupling for high-performance photodiodes. ACS Nano, 2019, 13, 3280-3291. (Supplementary Cover Article)

8. X. Zhang, L. Gao, H. Yu, Q. Liao, Z. Kang, Z. Zhang^*, and Y. Zhang^*. Single-atom vacancy doping in two-dimensional transition metal dichalcogenides. Accounts of Materials Research 2021, 2(8), 655-668.

9. L. Gao^#, Q. Liao^#, X. Zhang^#, X. Liu, L. Gu, B. Liu, J. Du, Y. Ou, J. Xiao, Z. Kang, Z. Zhang^*, and Y. Zhang^*. Defect-Engineered atomically thin MoS₂ homogeneous electronics for logic inverters. Advanced Materials, 2020, 32(2), 1906646.

10. B. Liu^#, X. Zhang^#. J. Du, J. Xiao, H. Yu, M. Hong, L. Gao, Y. Ou, Z. Kang, Q. Liao, Z. Zhang^*, and Y. Zhang^*, Synergistic-engineered van der Waals photodiodes with high efficiency. InfoMat, 2022, 4(3), e12282.

11. Y. Yu^#, X. Zhang^#, Z. Zhou, Z. Zhang, Y. Bao, H. Xu, L. Lin, Y. Zhang^*, and X. Wang^*. Microscopic and quantitative characterization of defect in MoS₂ monolayer by pump-probe technique. Photonics Research, 2019, 7(7), 711-721.

12. Wenhui Tang^#, X. Zhang^#, Huihui Yu, Gao Li, Xiaofu Wei, Mengyu Hong, Qinghua Zhang, Lin Gu, Qingliang Liao, Zhuo Kang, Zheng Zhang^*, and Yue Zhang^*. A van der Waals ferroelectric tunnel junction for ultrahigh temperature operation memory. Small Methods, 2022, 6 (4), 2101583

13. Mohammed Ismail Beddiar^#, X. Zhang*^#, Baishan Liu, Zheng Zhang*, Yue Zhang*. Ambipolar‐To‐Unipolar Conversion in Ultrathin 2D Semiconductors. Small Structures, 2022, 3 (12), 2200125

14. H. Yu, Z. Cao, Z. Zhang, X. Zhang^*, and Y. Zhang^*. Flexible electronics and optoelectronics of 2D van der Waals materials, International Journal of Minerals, Metallurgy and Materials, 2022, 29 (4), 671-690