专任教师
张先坤 教授
博士生导师邮 箱:zhangxiankun@ustb.edu.cn
电 话:010-62334725
地 址:工程实践楼一期5层
主页地址:https://scholar.google.com.hk/citations?user=1beql08AAAAJ&hl=zh-CN
教育背景:
2019年-2021年, 香港城市大学,化学系,博士后
2014年-2019年, 北京科技大学,材料科学与工程学院,博士
2010年-2014年, 湖北大学,材料科学与工程学院,学士
工作经历:
2021年-至今,北京科技大学,前沿交叉科学技术研究院,教授
研究方向:
1. 低维材料的可控合成与晶格结构设计;
2. 基于低维材料的新型半导体电子与光电器件;
3. 基于范德华异质结的高性能微电子器件与电路集成。
主要科研成果:
主要在二维半导体材料的制备、结构表征、器件组装和性能等研究领域开展工作,取得了多项原创性研究成果。在相关领域发表研究论文27篇,其中以第一作者发表11篇,包括 Nature Communications (2篇), Advanced Materials (5篇), ACS Nano (1篇), Photonics Research (1篇),Accounts of Materials Research(1篇)等。其中单篇论文最高引用超过160次(Google Scholar),该论文被评为“北京地区广受关注学术论文”;获得国家授权专利8项;参与撰写《半导体纳米线功能器件》第3章和《Van der Waals Heterostructures - Fabrications, Properties and Applications》第7、9章;获中国科协青年人才托举工程、北京市科技新星等计划支持,担任Chinese Chemical Letters期刊编委。
荣誉及社会兼职:
期刊编委:Chinese Chemical Letters,Elsevier,2022-至今
论文著作:
1. X. Zhang#, Q. Liao#, S. Liu#, Z. Kang, Z. Zhang*, J. Du, F. Li, S. Zhang, J. Xiao, B. Liu, Y. Ou, X. Liu, L. Gu, and Y. Zhang*, Poly(4-styrenesulfonate)-induced sulfur vacancy self-healing strategy for monolayer MoS2 homojunction photodiode. Nature Communications, 2017, 8, 15881.
2. X. Zhang#, B. Liu#, L. Gao, H. Yu, X. Liu, J. Du, J. Xiao, Y. Liu, L. Gu, Q. Liao, Z. Kang, Z. Zhang*, and Y. Zhang*. Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions. Nature Communications. 2021, 12, 1522.
3. X. Zhang#, Q. Liao#, Z. Kang#, B. Liu, X. Liu, Y. Ou, J. Xiao, J. Du, Y. Liu, L. Gao, L. Gu, M. Hong, H. Yu, Z. Zhang*, X. Duan*, and Y. Zhang*. Hidden vacancy benefit in monolayer 2D semiconductors. Advanced Materials. 2021, 33(7), 2007051.
4. X. Zhang#, Z. Kang#, L. Gao#, B. Liu, H. Yu, Q. Liao, Z. Zhang*, Y. Zhang. Molecule-upgraded van der Waals contacts for Schottky-barrier-free electronics. Advanced Materials. 2021, 33(45), 2104935.
5. X. Zhang#, Huihui Yu#, Wenhui Tang#, Xiaofu Wei, Li Gao, Mengyu Hong, Qingliang Liao, Zhuo Kang, Zheng Zhang*, and Yue Zhang*. All-van-der-Waals barrier-free contacts for high-mobility transistors. Advanced Materials. 2023, 202109521.
6. X. Zhang#, Yanzhe Zhang#, Huihui Yu, Hang Zhao, Zhihong Cao, Zheng Zhang*, Yue Zhang*. Van der Waals Interface‐dominated all‐2D Electronics. Advanced Materials. 2023, 2207966
7. X. Zhang#, Q. Liao#, Z. Kang, B. Liu, Y. Ou, J. Du, J. Xiao, L. Gao, H. Shan, Y. Luo, Z. Fang, P. Wang, Z. Sun, Z. Zhang*, and Y. Zhang*. Self-healing originated van der Waals homojunctions with strong interlayer coupling for high-performance photodiodes. ACS Nano, 2019, 13, 3280-3291. (Supplementary Cover Article)
8. X. Zhang, L. Gao, H. Yu, Q. Liao, Z. Kang, Z. Zhang*, and Y. Zhang*. Single-atom vacancy doping in two-dimensional transition metal dichalcogenides. Accounts of Materials Research 2021, 2(8), 655-668.
9. L. Gao#, Q. Liao#, X. Zhang#, X. Liu, L. Gu, B. Liu, J. Du, Y. Ou, J. Xiao, Z. Kang, Z. Zhang*, and Y. Zhang*. Defect-Engineered atomically thin MoS2 homogeneous electronics for logic inverters. Advanced Materials, 2020, 32(2), 1906646.
10. B. Liu#, X. Zhang#. J. Du, J. Xiao, H. Yu, M. Hong, L. Gao, Y. Ou, Z. Kang, Q. Liao, Z. Zhang*, and Y. Zhang*, Synergistic-engineered van der Waals photodiodes with high efficiency. InfoMat, 2022, 4(3), e12282.
11. Y. Yu#, X. Zhang#, Z. Zhou, Z. Zhang, Y. Bao, H. Xu, L. Lin, Y. Zhang*, and X. Wang*. Microscopic and quantitative characterization of defect in MoS2 monolayer by pump-probe technique. Photonics Research, 2019, 7(7), 711-721.
12. Wenhui Tang#, X. Zhang#, Huihui Yu, Gao Li, Xiaofu Wei, Mengyu Hong, Qinghua Zhang, Lin Gu, Qingliang Liao, Zhuo Kang, Zheng Zhang*, and Yue Zhang*. A van der Waals ferroelectric tunnel junction for ultrahigh temperature operation memory. Small Methods, 2022, 6 (4), 2101583
13. Mohammed Ismail Beddiar#, X. Zhang*#, Baishan Liu, Zheng Zhang*, Yue Zhang*. Ambipolar‐To‐Unipolar Conversion in Ultrathin 2D Semiconductors. Small Structures, 2022, 3 (12), 2200125
14. H. Yu, Z. Cao, Z. Zhang, X. Zhang*, and Y. Zhang*. Flexible electronics and optoelectronics of 2D van der Waals materials, International Journal of Minerals, Metallurgy and Materials, 2022, 29 (4), 671-690