教育背景：

2019年-2021年, 香港城市大学，化学系，博士后

2014年-2019年, 北京科技大学，材料科学与工程学院，博士

2010年-2014年, 湖北大学，材料科学与工程学院，学士

工作经历：

2021年-至今，北京科技大学，前沿交叉科学技术研究院，教授

研究方向：

1. 低维材料的可控合成与晶格结构设计;

2. 基于低维材料的新型半导体电子与光电器件；

3. 基于范德华异质结的高性能微电子器件与电路集成。

主要科研成果：

      国家级青年人才、未来芯片二维半导体材料与器件研究中心主任、博导。近年来，主要从事突破尺寸极限的新型二维过渡金属硫族化合物（TMDC）材料及其在集成电路基础半导体器件的应用研究，在二维TMDC材料的控制生长、异质结构筑与界面调控、高性能器件设计与构筑方面取得了多项创新成果。在低维半导体材料与器件领域发表原创论文40余篇，包括Nat. Mat.、Nat. Electronic.、Nat. Commun.（2篇）、Adv. Mater.（5篇）、ACS Nano(2)、InfoMat（2篇）、Adv. Funct. Mater.（3篇）等第一/通讯作者论文30篇。获中国科协青年人才托举工程、北京市科技新星等计划支持，担任《中国体视学与图像分析》编委、《InfoMat》、《National Science Open》、《Chinese Chemical Letters》青年编委和《Applied Sciences》客座编辑。

论文著作：

1. Xiaofu Wei^#, Xiankun Zhang^#, Huihui Yu, Li Gao, Wenhui Tang, Mengyu Hong, Zhangyi Chen, Zhuo Kang*, Zheng Zhang*, Yue Zhang*. Homojunction-loaded inverters based on self-biased molybdenum disulfide transistors for sub-picowatt computing. Nature Electronics. 2024, 7(2):138-46.

2. He Jiang^#, Xiankun Zhang^#, Kuanglei Chen^#, Xiaoyu He^#, Yihe Liu, Huihui Yu, Li Gao, Mengyu Hong, Yunan Wang, Zheng Zhang*, Yue Zhang*. Two-dimensional Czochralski growth of single-crystal MoS₂. Nature Materials 2025, 24, 188-196.

3. X. Zhang^#, Q. Liao^#, S. Liu^#, Z. Kang, Z. Zhang^*, J. Du, F. Li, S. Zhang, J. Xiao, B. Liu, Y. Ou, X. Liu, L. Gu, and Y. Zhang^*, Poly(4-styrenesulfonate)-induced sulfur vacancy self-healing strategy for monolayer MoS₂ homojunction photodiode. Nature Communications, 2017, 8, 15881.

4. X. Zhang^#, B. Liu^#, L. Gao, H. Yu, X. Liu, J. Du, J. Xiao, Y. Liu, L. Gu, Q. Liao, Z. Kang, Z. Zhang^*, and Y. Zhang^*. Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions. Nature Communications. 2021, 12, 1522.

5. X. Zhang^#, Q. Liao^#, Z. Kang^#, B. Liu, X. Liu, Y. Ou, J. Xiao, J. Du, Y. Liu, L. Gao, L. Gu, M. Hong, H. Yu, Z. Zhang^*, X. Duan^*, and Y. Zhang^*. Hidden vacancy benefit in monolayer 2D semiconductors. Advanced Materials. 2021, 33(7), 2007051.

6. X. Zhang^#, Z. Kang^#, L. Gao^#, B. Liu, H. Yu, Q. Liao, Z. Zhang^*, Y. Zhang. Molecule-upgraded van der Waals contacts for Schottky-barrier-free electronics. Advanced Materials. 2021, 33(45), 2104935.

7. X. Zhang^#, Huihui Yu^#, Wenhui Tang^#, Xiaofu Wei, Li Gao, Mengyu Hong, Qingliang Liao, Zhuo Kang, Zheng Zhang^*, and Yue Zhang^*. All-van-der-Waals barrier-free contacts for high-mobility transistors. Advanced Materials. 2023, 202109521.

8. X. Zhang^#, Yanzhe Zhang^#, Huihui Yu, Hang Zhao, Zhihong Cao, Zheng Zhang*, Yue Zhang*. Van der Waals Interface‐dominated all‐2D Electronics. Advanced Materials. 2023, 2207966

9. X. Zhang^#, Q. Liao^#, Z. Kang, B. Liu, Y. Ou, J. Du, J. Xiao, L. Gao, H. Shan, Y. Luo, Z. Fang, P. Wang, Z. Sun, Z. Zhang^*, and Y. Zhang^*. Self-healing originated van der Waals homojunctions with strong interlayer coupling for high-performance photodiodes. ACS Nano, 2019, 13, 3280-3291. (Supplementary Cover Article)

Huihui Yu, Yunan Wang, Haoran Zeng, Zhihong Cao, Qinghua Zhang, Li Gao, Mengyu Hong, Xiaofu Wei, Yue Zheng, Zheng Zhang*, Xiankun Zhang*, and Yue Zhang*. High-Spike Barrier Photodiodes Based on 2D Te/WS₂ Heterostructures. ACS Nano, 2024, 18, 17100-17110.

10. X. Zhang, L. Gao, H. Yu, Q. Liao, Z. Kang, Z. Zhang^*, and Y. Zhang^*. Single-atom vacancy doping in two-dimensional transition metal dichalcogenides. Accounts of Materials Research 2021, 2(8), 655-668.

11. L. Gao^#, Q. Liao^#, X. Zhang^#, X. Liu, L. Gu, B. Liu, J. Du, Y. Ou, J. Xiao, Z. Kang, Z. Zhang^*, and Y. Zhang^*. Defect-Engineered atomically thin MoS₂ homogeneous electronics for logic inverters. Advanced Materials, 2020, 32(2), 1906646.

12. B. Liu^#, X. Zhang^#. J. Du, J. Xiao, H. Yu, M. Hong, L. Gao, Y. Ou, Z. Kang, Q. Liao, Z. Zhang^*, and Y. Zhang^*, Synergistic-engineered van der Waals photodiodes with high efficiency. InfoMat, 2022, 4(3), e12282.

13. Mengyu Hong^#, Xiankun Zhang^#*, Yu Geng, Yunan Wang, Xiaofu Wei Li Gao, Huihui Yu, Zhihong Cao, Zheng Zhang*, Yue Zhang*. Universal transfer of full-class metal electrodes for barrier-free two-dimensional semiconductor contacts. InfoMat, 2024, 6.e12491.

14. Huihui Yu^#, Haoran Zeng^#, Yanzhe Zhang, Yihe Liu, Wei GuanShang, Xiankun Zhang*, Zheng Zhang*, and Yue Zhang*. Two-Dimensional Layered Topological Semimetals for Advanced Electronics and Optoelectronics. Advanced Functional Materials, 2025, 35, 2412913.