教育经历

      2025.XX至今，北京科技大学，前沿交叉科学技术研究院，博士后

      2018.09-2025.06，北京科技大学，前沿交叉科学技术研究院，博士

      2014.09-2018.06，北京科技大学，材料科学与工程学院，学士

研究方向

      二维半导体材料晶圆级可控合成

      二维半导体材料生长机理研究

      二维半导体材料规模化晶圆加工

主要科研成果：

      近五年发表一区Top论文6篇；授权发明专利1项；曾获北京科技大学优秀毕业生、校级优秀三好研究生、校优秀研究生干部、校十佳楼长、伟哲奖学金、China Nano最佳海报等荣誉。

代表性论文：

     [1] Liu Y., Jiang H., Gao L., Hong M., Yu H., Chen K., He X., Zhang X., Zhang Z., Zhang Y. Low carbon residue growth of wafer-scale MoS2 [J]. Small, 2025, 21(19): 2500980.

    [2] Jiang H., Zhang X., Chen K., He X., Liu Y., Gao L., Yu H., Hong M., Wang Y., Zhang Z., Zhang Y. Two-dimensional Czochralski growth of single-crystal MoS2 [J]. Nature Materials, 2025, 24(2): 188-96.

    [3] Li R., Hong M., Shangguan W., Zhang Y., Liu Y., Jiang H., Yu H., Gao L., Zhang X., Zhang Z., Zhang Y. Controlled lattice deformation for high-mobility two-dimensional MoTe2 growth[J]. Journal of Materiomics, 2025, 11(2): 100868.

    [4] Yu H., Zeng H., Zhang Y., Liu Y., Shangguan W., Zhang X., Zhang Z., Zhang Y. Two-dimensional layered topological semimetals for advanced electronics and optoelectronics [J]. Advanced Functional Materials, 2024, 35(2): 2412913.

     [5] Zhang X., Liu B., Gao L., Yu H., Liu X., Du J., Xiao J., Liu Y., Gu L., Liao Q., Kang Z., Zhang Z., Zhang Y. Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions [J]. Nature Communications, 2021, 12(1): 1522.

     [6] Zhang X., Liao Q., Kang Z., Liu B., Liu X., Ou Y., Xiao J., DU j., Liu Y., Gao L., Gu L., Hong M., Yu H., Zhang Z., Duan X., Zhang Y. Hidden vacancy benefit in monolayer 2D semiconductors [J]. Advanced Materials, 2021, 33(7): 2007051.